-
1.2 kV/25 A Normally-off p-n Junction/AlGaN/GaN HEMTs with Nanosecond Switching Characteristics and Robust Overvoltage Capability
Feng Zhou, Student Member, IEEE, Weizong Xu, Member, IEEE, Yuanyang Xia, Leke Wu, Tinggang Zhu, Fangfang Ren, Dunjun Chen, Rong Zhang, Youdou Zheng, and Hai Lu, Senior Member, IEEE
5.reverse p-n Junction HEMTs-xu 02.pdf -
Normally-off GaN HEMTs with InGaN p-gate cap layer formed by polarization doping
Changkun Zeng , Weizong Xu , Yuanyang Xia , Ke Wang , Fangfang Ren , Dong Zhou , Yiheng Li , Tinggang Zhu , Dunjun Chen , Rong Zhang Published 17 December 2021 ? ? 2021 The Japan Society of Applied Physics Applied Physics Express, Volume 15, Number 1 Citation Changkun Zeng et al 2022 Appl. Phys. Express 15 016502 Abstract Narrow gate margin has been the critical limiting factor for the p-gate normally-off GaN HEMTs, imposing significant challenges in both gate drive design and gate reliability. In this work, by developing dopant-free p-type polarization doping
-
Reliability concern of quasi-vertical GaN Schottky barrier diode under high temperature reverse bias stress
Sheng Li a, Chi Zhang a, Siyang Liu a, Jiaxing Wei a, Long Zhang a, Weifeng Sun a,*,
Youhua Zhu b, Tingting Zhang c, Dongsheng Wang c, Yinxia Sun c
a National ASIC System Engineering Research Center, School of Electronic Science and Engineering, Southeast University, Nanjing, 210096, China
b School of Electronics and Information, Nantong University, Nantong, 226019, China
c CorEnergy Semiconductor Co., LTD, Zhangjiagang, 215600, China
-
Integrated GaN MIS-HEMT with Multi-Channel Heterojunction SBD Structures
Sheng Li, Siyang Liu, Chi Zhang, Jiaxing Wei, Long Zhang, Weifeng Sun* National ASIC System Engineering Research Center Southeast University Nanjing, China
Youhua Zhu, Tingting Zhang, Dongsheng Wang, Yinxia Sun, Yiheng Li, Tinggang Zhu CorEnergy Semiconductor Co., LTD Zhangjiagang, China
-
Investigations of the gate instability characteristics in Schottky/ohmic type p-GaN gate normally-off AlGaN/GaN HEMTs
To cite this article: Changkun Zeng et al 2019 Appl. Phys. Express 12 121005
-
Effects of the cap layer on the properties of AlN barrier HEMT grown on 6-inch Si(111) substrate
To cite this article: Yuanyang Xia et al 2020 Mater. Res. Express 7 065902
